GA200SA60S - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: GA200SA60S Vishay General Semiconductor - Diodes Division
GA200SA60S

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 200A 630W SOT227B

GA200SA60S is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 600V 200A 630W SOT227B. Key specifications: mounting type Chassis Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC, current - collector (ic) (max) 200 A.

In Stock: 5,580

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)200 A
Power - Max630 W
Vce(on) (Max) @ Vge, Ic1.3V @ 15V, 100A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce16.25 nF @ 30 V
InputStandard
NTC ThermistorNo
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

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