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BZD27B11P-E3-18

In Stock: 1,874
BZD27B11P-E3-18 - Vishay General Semiconductor - Diodes Division - Diodes - Zener - Single
REF: BZD27B11P-E3-18 Vishay General Semiconductor - Diodes Division
BZD27B11P-E3-18

Vishay General Semiconductor - Diodes Division

DIODE ZENER 11V 800MW DO219AB

BZD27B11P-E3-18 is a Diodes - Zener - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE ZENER 11V 800MW DO219AB. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 175°C, package / case DO-219AB, power - max 800 mW.

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In Stock: 1,874

Specifications

11 parameters
Product StatusActive
Voltage - Zener (Nom) (Vz)11 V
Tolerance-
Power - Max800 mW
Impedance (Max) (Zzt)7 Ohms
Current - Reverse Leakage @ Vr4 µA @ 8.2 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 200 mA
Operating Temperature-65°C ~ 175°C
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)

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