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BZD17C4V7P-E3-08

In Stock: 6,418
BZD17C4V7P-E3-08 - Vishay General Semiconductor - Diodes Division - Diodes - Zener - Single
REF: BZD17C4V7P-E3-08 Vishay General Semiconductor - Diodes Division
BZD17C4V7P-E3-08

Vishay General Semiconductor - Diodes Division

DIODE ZENER 4.7V 800MW DO219AB

BZD17C4V7P-E3-08 is a Diodes - Zener - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE ZENER 4.7V 800MW DO219AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C, package / case DO-219AB, power - max 800 mW.

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In Stock: 6,418

Specifications

11 parameters
Product StatusActive
Voltage - Zener (Nom) (Vz)4.7 V
Tolerance-
Power - Max800 mW
Impedance (Max) (Zzt)-
Current - Reverse Leakage @ Vr10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 200 mA
Operating Temperature-55°C ~ 150°C
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)

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