RFQ List My Parts 0
Get a Quote Contact

BA779-HG3-08

In Stock: 7,284
BA779-HG3-08 - Vishay General Semiconductor - Diodes Division - Diodes - RF
REF: BA779-HG3-08 Vishay General Semiconductor - Diodes Division
BA779-HG3-08

Vishay General Semiconductor - Diodes Division

RF DIODE PIN 30V SOT23-3

BA779-HG3-08 is a Diodes - RF manufactured by Vishay General Semiconductor - Diodes Division. RF DIODE PIN 30V SOT23-3. Key specifications: operating temperature 125°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - max 50 mA.

Datasheet Request a Quote

In Stock: 7,284

Specifications

10 parameters
Product StatusObsolete
Diode TypePIN - Single
Voltage - Peak Reverse (Max)30V
Current - Max50 mA
Capacitance @ Vr, F0.5pF @ 0V, 100MHz
Resistance @ If, F50Ohm @ 1.5mA, 100MHz
Power Dissipation (Max)-
Operating Temperature125°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Related Products

BA679-GS08 - Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division BA679-GS08 0.48000 RFQ 1SV250-TB-E - onsemi onsemi 1SV250-TB-E 0.17000 RFQ MA4P504-1072T - MACOM Technology Solutions MACOM Technology Solutions MA4P504-1072T 6.91000 RFQ BA895H6327XTSA1 - Infineon Technologies Infineon Technologies BA895H6327XTSA1 0.38000 RFQ 1SV307(TPH3,F) - Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage 1SV307(TPH3,F) 0.36000 RFQ MA4P7493-134 - MACOM Technology Solutions MACOM Technology Solutions MA4P7493-134 3.90010 RFQ

Manufacturers in Diodes - RF

NXP USA Inc. Nexperia USA Inc. Comchip Technology Micro Commercial Co Toshiba Semiconductor and Storage NTE Electronics, Inc GeneSiC Semiconductor MACOM Technology Solutions Solid State Inc. CEL Linear Integrated Systems, Inc.

Need a Quote for BA779-HG3-08?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Diodes - RF
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →