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BA779-2-HG3-18

In Stock: 3,306
BA779-2-HG3-18 - Vishay General Semiconductor - Diodes Division - Diodes - RF
REF: BA779-2-HG3-18 Vishay General Semiconductor - Diodes Division
BA779-2-HG3-18

Vishay General Semiconductor - Diodes Division

RF DIODE PIN 30V SOT23-3

BA779-2-HG3-18 is a Diodes - RF manufactured by Vishay General Semiconductor - Diodes Division. RF DIODE PIN 30V SOT23-3. Key specifications: operating temperature 125°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - max 50 mA.

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In Stock: 3,306

Specifications

10 parameters
Product StatusObsolete
Diode TypePIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max)30V
Current - Max50 mA
Capacitance @ Vr, F0.5pF @ 0V, 100MHz
Resistance @ If, F50Ohm @ 1.5mA, 100MHz
Power Dissipation (Max)-
Operating Temperature125°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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