Name: ULN2803APG,CN
Brand: Toshiba Semiconductor and Storage
SKU: ULN2803APG,CN
Availability: InStock

REF: ULN2803APG,CN Toshiba Semiconductor and Storage

ULN2803APG,CN

TRANS 8NPN DARL 50V 0.5A 18DIP

ULN2803APG,CN is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 8NPN DARL 50V 0.5A 18DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 85°C (TA), package / case 18-DIP (0.300", 7.62mm), current - collector (ic) (max) 500mA.

Datasheet Request a Quote

In Stock: 4,533

Specifications

13 parameters

Product Status	Obsolete
Transistor Type	8 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V

Power - Max	1.47W
Frequency - Transition	-
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	18-DIP (0.300", 7.62mm)
Supplier Device Package	18-DIP