TTA0002(Q) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: TTA0002(Q) Toshiba Semiconductor and Storage
TTA0002(Q)

Toshiba Semiconductor and Storage

TRANS PNP 160V 18A TO3P

TTA0002(Q) is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 160V 18A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL, current - collector (ic) (max) 18 A.

In Stock: 4,572

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)18 A
Voltage - Collector Emitter Breakdown (Max)160 V
Vce Saturation (Max) @ Ib, Ic2V @ 900mA, 9A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Power - Max180 W
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(L)

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