TBC857B,LM - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: TBC857B,LM Toshiba Semiconductor and Storage
TBC857B,LM

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SOT23-3

TBC857B,LM is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 50V 0.15A SOT23-3. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 150 mA.

In Stock: 4,409

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic650mV @ 100mA, 5mA
Current - Collector Cutoff (Max)30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce210 @ 2mA, 5V
Power - Max320 mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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