Name: RN49A1FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: RN49A1FE(TE85L,F)
Price: 0.35 USD
Availability: InStock

REF: RN49A1FE(TE85L,F) Toshiba Semiconductor and Storage

RN49A1FE(TE85L,F)

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

RN49A1FE(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNP + NPN BRT Q1BSR=2.2KOHM Q1BE. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, power - max 100mW.

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In Stock: 4,083

Specifications

14 parameters

Product Status	Obsolete
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	2.2kOhms, 22kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz, 250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6