RN4983FE,LF(CT - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: RN4983FE,LF(CT Toshiba Semiconductor and Storage
RN4983FE,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

RN4983FE,LF(CT is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS NPN/PNP PREBIAS 0.1W ES6. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, power - max 100mW.

In Stock: 2,680

Specifications

14 parameters
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Need a Quote for RN4983FE,LF(CT?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →