RN2311,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN2311,LF Toshiba Semiconductor and Storage
RN2311,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A USM

RN2311,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS PNP 50V 0.1A USM. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 100 mW.

In Stock: 6,410

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200 MHz
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

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