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RN2101MFV,L3XHF(CT

In Stock: 6,220
RN2101MFV,L3XHF(CT - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN2101MFV,L3XHF(CT Toshiba Semiconductor and Storage
RN2101MFV,L3XHF(CT

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER

RN2101MFV,L3XHF(CT is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER. Key specifications: mounting type Surface Mount, package / case SOT-723, current - collector (ic) (max) 100 mA, power - max 150 mW.

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In Stock: 6,220

Specifications

14 parameters
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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