Name: RN1902FE,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: RN1902FE,LF(CT
Price: 0.35 USD
Availability: InStock

REF: RN1902FE,LF(CT Toshiba Semiconductor and Storage

RN1902FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1902FE,LF(CT is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS 2NPN PREBIAS 0.1W ES6. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, power - max 100mW.

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In Stock: 57

Specifications

14 parameters

Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6