RN1710,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: RN1710,LF Toshiba Semiconductor and Storage
RN1710,LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.

RN1710,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.. Key specifications: mounting type Surface Mount, package / case 5-TSSOP, SC-70-5, SOT-353, current - collector (ic) (max) 100mA, power - max 200mW.

In Stock: 6,000

Specifications

14 parameters
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case5-TSSOP, SC-70-5, SOT-353
Supplier Device PackageUSV

Need a Quote for RN1710,LF?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →