RN1444ATE85LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN1444ATE85LF Toshiba Semiconductor and Storage
RN1444ATE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.3A SMINI

RN1444ATE85LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 20V 0.3A SMINI. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 300 mA, power - max 200 mW.

In Stock: 3,884

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition30 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

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