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RN1314,LF

In Stock: 6,772
RN1314,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN1314,LF Toshiba Semiconductor and Storage
RN1314,LF

Toshiba Semiconductor and Storage

PB-F USM TRANSISTOR PD 100MW F 2

RN1314,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PB-F USM TRANSISTOR PD 100MW F 2.

Datasheet Request a Quote

In Stock: 6,772

Specifications

14 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Resistor - Base (R1)-
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
Frequency - Transition-
Power - Max-
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Transistors - Bipolar (BJT) - Single, Pre-Biased

NXP USA Inc. Nexperia USA Inc. Comchip Technology Micro Commercial Co Diotec Semiconductor Rectron USA NTE Electronics, Inc Renesas NXP Semiconductors Sanyo Yangzhou Yangjie Electronic Technology Co.,Ltd

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