RN1313,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN1313,LF Toshiba Semiconductor and Storage
RN1313,LF

Toshiba Semiconductor and Storage

PB-F BIAS RESISTOR BUILT-IN TRAN

RN1313,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PB-F BIAS RESISTOR BUILT-IN TRAN.

In Stock: 4,778

Specifications

14 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Resistor - Base (R1)-
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
Frequency - Transition-
Power - Max-
Mounting Type-
Package / Case-
Supplier Device Package-

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