Name: RN1312(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: RN1312(TE85L,F)
Price: 0.29 USD
Availability: InStock

REF: RN1312(TE85L,F) Toshiba Semiconductor and Storage

RN1312(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

RN1312(TE85L,F) is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A USM. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 150 mW.

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In Stock: 2,845

Specifications

14 parameters

Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250 MHz
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70