RN1112CT(TPL3) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN1112CT(TPL3) Toshiba Semiconductor and Storage
RN1112CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.05A CST3

RN1112CT(TPL3) is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 20V 0.05A CST3. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 50 mA, power - max 50 mW.

In Stock: 3,528

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max50 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

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