RN1108ACT(TPL3) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: RN1108ACT(TPL3) Toshiba Semiconductor and Storage
RN1108ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.08A CST3

RN1108ACT(TPL3) is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.08A CST3. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 80 mA, power - max 100 mW.

In Stock: 3,756

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

Need a Quote for RN1108ACT(TPL3)?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →