Name: RN1105MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: RN1105MFV,L3F
Availability: InStock

REF: RN1105MFV,L3F Toshiba Semiconductor and Storage

RN1105MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

RN1105MFV,L3F is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A VESM. Key specifications: mounting type Surface Mount, package / case SOT-723, current - collector (ic) (max) 100 mA, power - max 150 mW.

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In Stock: 9,958

Specifications

14 parameters

Product Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM