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MT3S20TU(TE85L)

In Stock: 2,064
MT3S20TU(TE85L) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - RF
REF: MT3S20TU(TE85L) Toshiba Semiconductor and Storage
MT3S20TU(TE85L)

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ UFM

MT3S20TU(TE85L) is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS NPN 12V 7GHZ UFM. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-SMD, Flat Lead, current - collector (ic) (max) 80mA.

Datasheet Request a Quote

In Stock: 2,064

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.45dB @ 20mA, 5V
Gain12dB
Power - Max900mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 5V
Current - Collector (Ic) (Max)80mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Lead
Supplier Device PackageUFM

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