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MT3S111TU,LF

In Stock: 15,000
MT3S111TU,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - RF
REF: MT3S111TU,LF Toshiba Semiconductor and Storage
MT3S111TU,LF

Toshiba Semiconductor and Storage

RF SIGE NPN BIPOLAR TRANSISTOR N

MT3S111TU,LF is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF SIGE NPN BIPOLAR TRANSISTOR N. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-SMD, Flat Lead, current - collector (ic) (max) 100mA.

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In Stock: 15,000

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain12.5dB
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Lead
Supplier Device PackageUFM

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