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MT3S111P(TE12L,F)

In Stock: 674
MT3S111P(TE12L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - RF
REF: MT3S111P(TE12L,F) Toshiba Semiconductor and Storage
MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

MT3S111P(TE12L,F) is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS NPN 6V 8GHZ PW-MINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 100mA.

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In Stock: 674

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.25dB @ 1GHz
Gain10.5dB
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePW-MINI

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