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HN4B102J(TE85L,F)

In Stock: 8,092
HN4B102J(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN4B102J(TE85L,F) Toshiba Semiconductor and Storage
HN4B102J(TE85L,F)

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

HN4B102J(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. PB-F POWER TRANSISTOR SMV MOQ=30.

Datasheet Request a Quote

In Stock: 8,092

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Analog Devices Inc. NXP USA Inc. Nexperia USA Inc. Panjit International Inc. Micro Commercial Co Diotec Semiconductor Central Semiconductor Corp Allegro MicroSystems Solid State Inc. Sanken Linear Integrated Systems, Inc.

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