HN4B01JE(TE85L,F)

In Stock: 3,594
HN4B01JE(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage
HN4B01JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ESV PLN

HN4B01JE(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS NPN/PNP 50V 0.15A ESV PLN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-553, current - collector (ic) (max) 150mA.

In Stock: 3,594

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 10MA, 100MA
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV

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