Name: HN3C51F-GR(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: HN3C51F-GR(TE85L,F
Availability: InStock

REF: HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage

HN3C51F-GR(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2NPN 120V 0.1A SM6

HN3C51F-GR(TE85L,F is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2NPN 120V 0.1A SM6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-74, SOT-457, current - collector (ic) (max) 100mA.

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In Stock: 5,764

Specifications

13 parameters

Product Status	Obsolete
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V

Power - Max	300mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SM6