HN2A01FE-Y(TE85L,F

In Stock: 8,064
HN2A01FE-Y(TE85L,F - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN2A01FE-Y(TE85L,F Toshiba Semiconductor and Storage
HN2A01FE-Y(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

HN2A01FE-Y(TE85L,F is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 50V 0.15A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, current - collector (ic) (max) 150mA.

In Stock: 8,064

Specifications

13 parameters
Product StatusObsolete
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

Need a Quote for HN2A01FE-Y(TE85L,F?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →