HN1C03F-B(TE85L,F)

In Stock: 7,301
HN1C03F-B(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage
HN1C03F-B(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN 20V 0.3A SM6

HN1C03F-B(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2NPN 20V 0.3A SM6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-74, SOT-457, current - collector (ic) (max) 300mA.

In Stock: 7,301

Specifications

13 parameters
Product StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA, 2V
Power - Max300mW
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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