HN1B04FE-Y,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1B04FE-Y,LF Toshiba Semiconductor and Storage
HN1B04FE-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

HN1B04FE-Y,LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS NPN/PNP 50V 0.15A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, current - collector (ic) (max) 150mA.

In Stock: 157

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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