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HN1B04F(TE85L,F)

In Stock: 4,108
HN1B04F(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1B04F(TE85L,F) Toshiba Semiconductor and Storage
HN1B04F(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

HN1B04F(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS NPN/PNP 30V 0.5A SM6. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-74, SOT-457, current - collector (ic) (max) 500mA.

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In Stock: 4,108

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 100mA, 1V
Power - Max300mW
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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