HN1B01FU-GR,LXHF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1B01FU-GR,LXHF Toshiba Semiconductor and Storage
HN1B01FU-GR,LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

HN1B01FU-GR,LXHF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP + NPN TR VCEO:-50. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 150mA, power - max 200mW.

In Stock: 3,992

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA, 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max200mW
Frequency - Transition120MHz, 150MHz
Operating Temperature-
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

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