HN1A01FE-Y,LXHF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1A01FE-Y,LXHF Toshiba Semiconductor and Storage
HN1A01FE-Y,LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

HN1A01FE-Y,LXHF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP + PNP TR VCEO:-50. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-563, SOT-666, current - collector (ic) (max) 150mA.

In Stock: 8,558

Specifications

13 parameters
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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