HN1A01F-Y(TE85L,F)

In Stock: 9,534
HN1A01F-Y(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays
REF: HN1A01F-Y(TE85L,F) Toshiba Semiconductor and Storage
HN1A01F-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SM6

HN1A01F-Y(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 2PNP 50V 0.15A SM6. Key specifications: mounting type Surface Mount, operating temperature 125°C (TJ), package / case SC-74, SOT-457, current - collector (ic) (max) 150mA.

In Stock: 9,534

Specifications

13 parameters
Product StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max300mW
Frequency - Transition80MHz
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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