Name: GT8G133(TE12L,Q)
Brand: Toshiba Semiconductor and Storage
SKU: GT8G133(TE12L,Q)
Availability: InStock

REF: GT8G133(TE12L,Q) Toshiba Semiconductor and Storage

GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

GT8G133(TE12L,Q) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT 400V 600MW 8TSSOP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 600 mW.

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In Stock: 8,393

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 4V, 150A
Power - Max	600 mW
Switching Energy	-
Input Type	Standard

Gate Charge	-
Td (on/off) @ 25°C	1.7µs/2µs
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP