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GT60N321(Q)

In Stock: 3,832
GT60N321(Q) - Toshiba Semiconductor and Storage - Transistors - IGBTs - Single
REF: GT60N321(Q) Toshiba Semiconductor and Storage
GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

GT60N321(Q) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT 1000V 60A 170W TO3P LH. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL, current - collector (ic) (max) 60 A.

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In Stock: 3,832

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5 µs
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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