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GT50JR22(STA1,E,S)

In Stock: 5,193
GT50JR22(STA1,E,S) - Toshiba Semiconductor and Storage - Transistors - IGBTs - Single
REF: GT50JR22(STA1,E,S) Toshiba Semiconductor and Storage
GT50JR22(STA1,E,S)

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

GT50JR22(STA1,E,S) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. PB-F IGBT / TRANSISTOR TO-3PN(OS.

Datasheet Request a Quote

In Stock: 5,193

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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