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GT50J121(Q)

In Stock: 2,243
GT50J121(Q) - Toshiba Semiconductor and Storage - Transistors - IGBTs - Single
REF: GT50J121(Q) Toshiba Semiconductor and Storage
GT50J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

GT50J121(Q) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT 600V 50A 240W TO3P LH. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL, current - collector (ic) (max) 50 A.

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In Stock: 2,243

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
Power - Max240 W
Switching Energy1.3mJ (on), 1.34mJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 50A, 13Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)

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