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GT30N135SRA,S1E

In Stock: 68
GT30N135SRA,S1E - Toshiba Semiconductor and Storage - Transistors - IGBTs - Single
REF: GT30N135SRA,S1E Toshiba Semiconductor and Storage
GT30N135SRA,S1E

Toshiba Semiconductor and Storage

D-IGBT TO-247 VCES=1350V IC=30A

GT30N135SRA,S1E is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. D-IGBT TO-247 VCES=1350V IC=30A. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.

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In Stock: 68

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 60A
Power - Max348 W
Switching Energy-, 1.3mJ (off)
Input TypeStandard
Gate Charge270 nC
Td (on/off) @ 25°C-
Test Condition300V, 60A, 39Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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