Name: GT30J341,Q
Brand: Toshiba Semiconductor and Storage
SKU: GT30J341,Q
Price: 2.58 USD
Availability: InStock

REF: GT30J341,Q Toshiba Semiconductor and Storage

GT30J341,Q

Toshiba Semiconductor and Storage

IGBT TRANS 600V 30A TO3PN

GT30J341,Q is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT TRANS 600V 30A TO3PN. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 59 A.

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In Stock: 2,704

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	59 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Power - Max	230 W
Switching Energy	800µJ (on), 600µJ (off)
Input Type	Standard

Gate Charge	-
Td (on/off) @ 25°C	80ns/280ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)