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GT30J121(Q)

In Stock: 4,228
GT30J121(Q) - Toshiba Semiconductor and Storage - Transistors - IGBTs - Single
REF: GT30J121(Q) Toshiba Semiconductor and Storage
GT30J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

GT30J121(Q) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT 600V 30A 170W TO3PN. Key specifications: mounting type Through Hole, package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 30 A, power - max 170 W.

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In Stock: 4,228

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Power - Max170 W
Switching Energy1mJ (on), 800µJ (off)
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)

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