Name: GT20N135SRA,S1E
Brand: Toshiba Semiconductor and Storage
SKU: GT20N135SRA,S1E
Price: 3.37 USD
Availability: InStock

REF: GT20N135SRA,S1E Toshiba Semiconductor and Storage

GT20N135SRA,S1E

Toshiba Semiconductor and Storage

D-IGBT TO-247 VCES=1350V IC=40A

GT20N135SRA,S1E is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. D-IGBT TO-247 VCES=1350V IC=40A. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 40 A.

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In Stock: 30

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	312 W
Switching Energy	-, 700µJ (off)
Input Type	Standard

Gate Charge	185 nC
Td (on/off) @ 25°C	-
Test Condition	300V, 40A, 39Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247