Name: GT10J312(Q)
Brand: Toshiba Semiconductor and Storage
SKU: GT10J312(Q)
Availability: InStock

REF: GT10J312(Q) Toshiba Semiconductor and Storage

GT10J312(Q)

IGBT 600V 10A 60W TO220SM

GT10J312(Q) is a Transistors - IGBTs - Single manufactured by Toshiba Semiconductor and Storage. IGBT 600V 10A 60W TO220SM. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 10 A.

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In Stock: 1,739

Specifications

17 parameters

Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	60 W
Switching Energy	-
Input Type	Standard

Gate Charge	-
Td (on/off) @ 25°C	400ns/400ns
Test Condition	300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)	200 ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-220SM