BAS516,H3F - Toshiba Semiconductor and Storage - Diodes - Rectifiers - Single
REF: BAS516,H3F Toshiba Semiconductor and Storage
BAS516,H3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA ESC

BAS516,H3F is a Diodes - Rectifiers - Single manufactured by Toshiba Semiconductor and Storage. DIODE GEN PURP 100V 250MA ESC. Key specifications: mounting type Surface Mount, package / case SC-79, SOD-523.

In Stock: 5,190

Specifications

13 parameters
Product StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io)250mA
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)3 ns
Current - Reverse Leakage @ Vr200 nA @ 80 V
Capacitance @ Vr, F0.35pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseSC-79, SOD-523
Supplier Device PackageESC
Operating Temperature - Junction150°C (Max)

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