2SD2257,KEHINQ(J - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SD2257,KEHINQ(J Toshiba Semiconductor and Storage
2SD2257,KEHINQ(J

Toshiba Semiconductor and Storage

TRANS NPN 100V 3A TO220NIS

2SD2257,KEHINQ(J is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 100V 3A TO220NIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 3 A.

In Stock: 3,754

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Power - Max2 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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