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2SD2206(TE6,F,M)

In Stock: 6,545
2SD2206(TE6,F,M) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SD2206(TE6,F,M) Toshiba Semiconductor and Storage
2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 100V 2A TO92MOD

2SD2206(TE6,F,M) is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 100V 2A TO92MOD. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-226-3, TO-92-3 Long Body, current - collector (ic) (max) 2 A.

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In Stock: 6,545

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 2V
Power - Max900 mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92MOD

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