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2SD2129,LS4ALPSQ(M

In Stock: 7,585
2SD2129,LS4ALPSQ(M - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SD2129,LS4ALPSQ(M Toshiba Semiconductor and Storage
2SD2129,LS4ALPSQ(M

Toshiba Semiconductor and Storage

TRANS NPN 100V 3A TO220NIS

2SD2129,LS4ALPSQ(M is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 100V 3A TO220NIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 3 A.

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In Stock: 7,585

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1.5A, 3V
Power - Max2 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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