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2SD1407A-Y(F)

In Stock: 9,696
2SD1407A-Y(F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SD1407A-Y(F) Toshiba Semiconductor and Storage
2SD1407A-Y(F)

Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

2SD1407A-Y(F) is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 100V 5A TO220NIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 5 A.

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In Stock: 9,696

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2V @ 400mA, 4A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 5V
Power - Max30 W
Frequency - Transition12MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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