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2SD1221-Y(Q)

In Stock: 1,152
2SD1221-Y(Q) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SD1221-Y(Q) Toshiba Semiconductor and Storage
2SD1221-Y(Q)

Toshiba Semiconductor and Storage

TRANS NPN 60V 3A PW-MOLD

2SD1221-Y(Q) is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 60V 3A PW-MOLD. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 3 A.

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In Stock: 1,152

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Power - Max1 W
Frequency - Transition3MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePW-MOLD

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