2SC5198-O(S1,E - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SC5198-O(S1,E Toshiba Semiconductor and Storage
2SC5198-O(S1,E

Toshiba Semiconductor and Storage

TRANS NPN 140V 10A TO3P

2SC5198-O(S1,E is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS NPN 140V 10A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 10 A.

In Stock: 1,408

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)140 V
Vce Saturation (Max) @ Ib, Ic2V @ 700mA, 7A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce55 @ 1A, 5V
Power - Max100 W
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)

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